Statement I : When a Si sample is doped with Boron, it becomes $p$-type and when doped by Arsenic it

Question

Statement I : When a Si sample is doped with Boron, it becomes $p$-type and when doped by Arsenic it becomes $n$-type semiconductor such that $p$-type has excess holes and $n$-type has excess electrons. \ Statement II: When such $p$-type and $n$-type semiconductors, are fused to make a junction, a current will automatically flow which can be detected with an externally connected ammeter.

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(b) : When $p-n$ junction is formed, an electric field is generated from $n$-side to $p$-side due to which barrier potential arises and majority charge carrier cannot flow through the junction due to barrier potential so current is zero unless we apply forward bias voltage.